| PART |
Description |
Maker |
| FSS23A0R FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R1 FN |
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
From old datasheet system
9A/ 200V/ 0.330 Ohm/ Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| VN0808LSTR |
330 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 TO-92S, 3 PIN
|
Vishay Intertechnology, Inc.
|
| 1214-370V |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 370; P(in) (W): 50; Gain (dB): 8.7; Vcc (V): 50; Pulse Width (µsec): 330; Duty Cycle (%): 10; Case Style: 55ST-1 RF POWER TRANSISTOR
370 Watts - 50 Volts, 330 μs, 10% Radar 1200 - 1400 MHz
|
STMicroelectronics N.V.
Microsemi Corporation
|
| OLS-330BA460 OLS-330BA460-X-TD OLS-330BA460-X-TU |
Series 330 - 1206 with Lens blue
|
OSA Opto Light GmbH
|
| KM3303VCLF |
1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR
|
GOWANDA ELECTRONICS CORP
|
| 17S333KLF |
1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR
|
GOWANDA ELECTRONICS CORP
|
| 305U200 |
330 A, 2000 V, SILICON, RECTIFIER DIODE, DO-205AB
|
VISHAY SEMICONDUCTORS
|
| ST330S16P0PBF ST330S16P1PBF ST330SPBF |
Phase Control Thyristors (Stud Version), 330 A
|
Vishay Siliconix
|
| DMS-3500PMO02 DMS-3500PWR02 |
330 W NEBS 3 Redundant Universal AC-DC Power Supply
|
JDS Uniphase Corporation
|
| RA55H3340M RA55H3340M-101 |
330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| OIS-330880 OIS-330880-X-TD OIS-330880-X-TU |
Series 330 - 1206 with Lens IR high intensity 880 nm
|
OSA Opto Light GmbH
|
